unisonic technologies co., ltd umz1n preliminary dual transistor www.unisonic.com.tw 1 of 3 copyright ? 2013 unisonic technologies co., ltd qw-r218-024.a general purpose transistor ? description the utc umz1n is a dual transistor, including an npn transistor and a pnp transistor. it uses utc?s advanced technology to provide customers with high dc current gain, etc. ? features * high dc current gain (npn: h fe >120 @ v ce =6v, i c =1ma; pnp: h fe >120 @ v ce =-6v,i c =-1ma) ? symbol ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 4 5 6 UMZ1NL-AL6-R umz1ng-al6-r sot-363 e1 b1 c2 e2 b2 c1 tape reel ? marking z1n 12 3 4 5 6 l: lead free g: halogen free
umz1n preliminary dual transistor www.unisonic.com.tw 2 of 3 copyright ? 2013 unisonic technologies co., ltd qw-r215-002,c ? absolute maximum ratings (t a =25c) parameter symbol limits unit tr1 tr2 collector-base voltage v cbo 60 -60 v collector-emitter voltage v ceo 50 -50 v emitter-base voltage v ebo 7 -6 v collector current i c 0.15 -0.15 a collector power dissipation pc 0.15 w junction temperature t j 150 c storage temperature t stg -55~+150 c note: absolute maximum ratings are those values beyond which the device coul d be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? electrical characteristics (t a =25c) parameter symbol test conditions min typ max unit tr1 collector-base breakdown voltage bv cbo i c =50a 60 v collector-emitter breakdown voltage bv ceo i c =1ma 50 v emitter-base breakdown voltage bv ebo i e =50a 7 v collector cut-off current i cbo v cb =60v 0.1 a emitter cut-off current i ebo v eb =7v 0.1 a collector-emitter satu ration voltage v ce ( sat ) i c /i b =50ma/5ma 0.4 v dc current transfer ratio h fe v ce =6v, i c =1ma 120 560 transition frequency f t v ce =12v, i e =-2ma, f=100mhz 180 mhz output capacitance cob v cb =12v, i e =0a, f=1mhz 2 3.5 pf tr2 collector-base breakdown voltage bv cbo i c =-50a -60 v collector-emitter breakdown voltage bv ceo i c =-1ma -50 v emitter-base breakdown voltage bv ebo i e =-50a -6 v collector cut-off current i cbo v cb =-60v -0.1 a emitter cut-off current i ebo v eb =-6v -0.1 a collector-emitter satu ration voltage v ce ( sat ) i c /i b =-50ma/-5ma -0.5 v dc current transfer ratio h fe v ce =-6v, i c =-1ma 120 560 transition frequency f t v ce =-12v, i e =2ma, f=100mhz 140 mhz output capacitance cob v cb =-12v,i e =0a, f=1mhz 4.0 5.0 pf
umz1n preliminary dual transistor unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r218-024,a utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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